By Topic

A spin dependent recombination study of radiation induced defects at and near the Si/SiO2 interface

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Jupina, M.A. ; Pennsylvania State Univ., University Park, PA, USA ; Lenahan, P.M.

A novel electron spin resonance technique, spin-dependent recombination (SDR), permits extremely rapid, high-signal-to-noise-ratio electron spin resonance (ESR) measurements of electrically active radiation damage centers in (relatively) hard MOS transistors in integrated circuits. SDR was used to observe the radiation-induced buildup of Pbo and E' centers at relatively low concentration in individual MOSFETs in integrated circuits with (100) silicon surface orientation. Earlier ESR studies of extremely large (~1 cm2) capacitor structures have identified Pb and E' centers as the dominant radiation-induced defects in MOS devices. The present results extend and confirm these earlier results and at least qualitatively answer objections to the earlier work related to the relevance of large capacitor studies to transistors in an integrated circuit

Published in:

Nuclear Science, IEEE Transactions on  (Volume:36 ,  Issue: 6 )