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Based on the half mode substrate integrated waveguide (HMSIW) technology, a new type of Gunn diode oscillator was developed. Main emphasis was placed on HMSIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode transistor devices have been analyzed. This oscillator's performance is characterized by medium level output power of 13.2 dBm, phase noise less than -97.3 dBc/Hz@100 kHz and frequency excursion 40 MHz over temperature range from 10 C to 75 C. It has some advantages such as planar integration, low cost, small size, good temperature-frequency stability, low phase noise.
Millimeter Waves, 2008. GSMM 2008. Global Symposium on
Date of Conference: 21-24 April 2008