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We report fabrication of phase change random access memory (PRAM) using nanowires (NWs) of GeTe and In2Se3. NWs were grown by a vapor-liquid-solid technique and ranged from 40 to 80 nm in diameter and several micrometers long. A dynamic switching ratio (on/off ratio) of 2200 and 2 times 105 was realized for GeTe and indium selenide devices, respectively. The programming power for the RESET operation is only tens of microwatts compared to the milliwatt power levels required by the conventional thin-film-based PRAM.