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Sensitivity Enhancement of Metal– Semiconductor –Metal Photodetectors on Low-Temperature-Grown GaAs Using Alloyed Contacts

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8 Author(s)
Mikulics, M. ; Center of Nanoelectronic Syst. for Inf. Technol., Inst. of Bio- & Nanosystems, Julich ; Marso, M. ; Wu, S. ; Fox, A.
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We have fabricated and characterized metal- semiconductor-metal (MSM) photodetectors based on low- temperature-grown GaAs with alloyed (i.e., ohmic-type) contacts. The annealed contacts optimize the electric field distribution inside the photodetector structure which results in an up-to-200% responsivity increase of the devices, compared to conventional MSM detectors with standard nonalloyed (Schottky-type) metallization fabricated on identical material. The improved MSM device with alloyed contacts shows more than three times larger output amplitude at illumination with a 100-fs Ti: sapphire laser, compared to the nonalloyed devices, without degradation of detector speed.

Published in:

Photonics Technology Letters, IEEE  (Volume:20 ,  Issue: 12 )

Date of Publication:

June15, 2008

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