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Dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors

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3 Author(s)
Lee, S.-Y. ; Dept. of Semicond. Sci. & Technol., Chonbuk Nat. Univ., Jeonju ; Hyung, J.-H. ; Lee, S.-K.

Straightforward and successful dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors (FETs) are reported, in which the DEP is used to align and manipulate ZnO nanowires. The DEP-prepared multi-channel ZnO nanowire FETs can manage on-current exceeding ~ 1 muA at low bias voltages.

Published in:

Electronics Letters  (Volume:44 ,  Issue: 11 )