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High pak power femtosecond pulses from modelocked semiconductor laser in external cavity

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6 Author(s)
Schlauch, T. ; Lehrstuhl fur Photonik und THz-Technol., Ruhr-Univ. Bochum, Bochum ; Li, M. ; Hofmann, M.R. ; Klehr, A.
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The generation of high peak power femtosecond pulses from an all semiconductor laser system is demonstrated. The system is based on a passively modelocked two-section laser diode in an external cavity, a tapered amplifier and a compact external pulse compressor. Pulse durations are achieved below 600 fs with an average optical power above 500 mW at a repetition rate of 330 MHz. This corresponds to a peak power of 2.5 kW, which is the highest value reported for an all semiconductor ultrafast laser system so far.

Published in:

Electronics Letters  (Volume:44 ,  Issue: 11 )