By Topic

Statistical Compact Modeling of Variations in Nano MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chung-Hsun Lin ; Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720-1770 USA. Phone: +1-510-643-2638, FAX: +1-510-643-2636, E-mail: chl@eecs.berkeley.edu ; Mohan V. Dunga ; Darsen Lu ; Ali M. Niknejad
more authors

We present a methodology to generate performance-aware corner models--PAM. Accuracy is improved by emphasizing electrical variation data and reconciling the process and electrical variation data. PAM supports corner (plusmnsigma and plusmn2sigma) simulation and MC simulation. Furthermore, PAM supports application-specific corner cards, for example, for gain sensitive applications.

Published in:

VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on

Date of Conference:

21-23 April 2008