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Statistical Compact Modeling of Variations in Nano MOSFETs

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5 Author(s)
Chung-Hsun Lin ; Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720-1770 USA. Phone: +1-510-643-2638, FAX: +1-510-643-2636, E-mail: ; Mohan V. Dunga ; Darsen Lu ; Ali M. Niknejad
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We present a methodology to generate performance-aware corner models--PAM. Accuracy is improved by emphasizing electrical variation data and reconciling the process and electrical variation data. PAM supports corner (plusmnsigma and plusmn2sigma) simulation and MC simulation. Furthermore, PAM supports application-specific corner cards, for example, for gain sensitive applications.

Published in:

VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on

Date of Conference:

21-23 April 2008