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Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs

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16 Author(s)

We demonstrate for the first time a gate first high-k/metal gate (MG) nFET with EOT = 0.74 nm (Tinv = 1.15 nm), low Vt = 0.30 V, high performance [Ion/IOff = 1310(muA/um) at 100(nA/um)], low leakage (> 200x reduction vs. SiO2/PolySi) and good PBTI. Low-k interface layer scaling and high-k La-doping enable this desirable EOT and Vt. SiON/HfLaSiON can give similar interface quality as SiO2/HfSiON. Device performance was further improved 5% by strain engineering.

Published in:

VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on

Date of Conference:

21-23 April 2008