Referenced Items are not available for this document.
Sub-nanometer EOT scaling on In
In this paper the scalability of ALD HfO2 in passivating high indium content InGaAs were studied. A capacitance equivalent thickness (CET) of 1.0 nm has been achieved in this work without any surface pretreated process.
Published in:
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Date of Conference: 21-23 April 2008
- Page(s):
- 150 - 151
- ISSN :
- 1930-885X
- E-ISBN :
- 978-1-4244-1615-8
- Print ISBN:
- 978-1-4244-1614-1
- INSPEC Accession Number:
- 10059658
- Conference Location :
- Hsinchu
- Digital Object Identifier :
- 10.1109/VTSA.2008.4530841
- Product Type:
- Conference Publications
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