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Sub-nanometer EOT scaling on In0.53Ga0.47As with atomic layer deposited HfO2 as gate dielectric

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7 Author(s)
Lee, K.Y. ; Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu ; Chang, P. ; Chang, Y.C. ; Huang, M.L.
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In this paper the scalability of ALD HfO2 in passivating high indium content InGaAs were studied. A capacitance equivalent thickness (CET) of 1.0 nm has been achieved in this work without any surface pretreated process.

Published in:

VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on

Date of Conference:

21-23 April 2008

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