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High Endurance Multi-gate TiN Nanocrystal Memory Devices with High-k Blocking Dielectric and High Work Function Gate Electrode

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9 Author(s)
Lu, C.P. ; Dept. of Electron. Eng., Inst. of Electron., Hsinchu ; Luo, C.K. ; Tsui, B.Y. ; Lin, C.H.
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In this work, n-channel Multi-gate FET TiN nanocrystal memory using p+ poly-Si gate and Al2O3 high-k blocking dielectric is demonstrated with good transistor characteristics and moderate high memory window for the first time. High endurance of only 3% window narrowing after 104 P/E cycles is demonstrated. The phenomenon and mechanism of erasing-first induced retention degradation are also reported.

Published in:

VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on

Date of Conference:

21-23 April 2008