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Novel Silicon Surface Pre-Treatment (SSPT) Technique for CMOS Device Performance Boosting

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9 Author(s)
Da-Yuan Lee ; Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Hsinchu, Taiwan, R.O.C. Tel: 886-3-5636688 ext 7125363, Fax: 886-3-5797310, E-mail: ; C. C. Chen ; C. H. Huang ; PS Lim
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In this paper, a novel surface treatment technique using Silicon Surface Pre-Treatment (SSPT) technique to boost high performance CMOS circuit is reported. This approach provides a smooth silicon surface and extends the effective channel width to enhance device performance on both N and PMOSFET In this work, a smooth and rounded active area (AA) surface was successfully fabricated. Using this technique, we demonstrated a significant device boost of 15% and 7% on small dimension N and PMOSFET, respectively. These achievements were demonstrated without negative impact on GOI and NBTI.

Published in:

VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on

Date of Conference:

21-23 April 2008