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A Packaged and ESD-Protected Inductorless 0.1–8 GHz Wideband CMOS LNA

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4 Author(s)
Tienyu Chang ; Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL ; Jinghong Chen ; Rigge, L. ; Jenshan Lin

In this letter, an inductorless 0.1-8 GHz wideband CMOS differential low noise amplifier (LNA) based on a modified resistive feedback topology is proposed. Without using any passive inductors, the modified resistive feedback technique implemented with a parallel R-C feedback, an active inductor load, and neutralization capacitors achieves high gain, low noise, and good return loss over a wide bandwidth. To ensure the robustness in the system integration, electro-static discharge diodes are added to the radio frequency pads. The LNA was fabricated using a digital 90 nm CMOS technology. It achieves a 3 dB bandwidth of 8 GHz with a 16 dB voltage gain, noise figures from 3.4 dB to 5.8 dB across the whole band, and an input third-order intermodulation product (IIP3) of -9 dBm. The active area of the chip is 0.034 mm2. The chip was packaged and tested on an FR4 PCB using the chip-on-board approach.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:18 ,  Issue: 6 )

Date of Publication:

June 2008

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