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Modeling and Characterization of Schottky Diode on AlGaAs/GaAs HEMT Structure for Rectenna Device

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3 Author(s)
Parimon, N.B. ; Mater. Innovations & Nano-Electron. (MINE) Group, Univ. Teknol. Malaysia, Skudai ; Yusof, S.S.B. ; Bin Hashim, A.M.

The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design and simulation of Schottky diode on AlGaAs/GaAs HEMT structure was carried out. From the simulated results, it was found that the operating frequency of the Schottky diode is tunable based on the length of coplanar waveguide.

Published in:

Modeling & Simulation, 2008. AICMS 08. Second Asia International Conference on

Date of Conference:

13-15 May 2008

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