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A multi-GHz continuous-time bandpass filter based on 0.1-mum InP-based high-electron mobility transistor (HEMT) technology is designed. Since p-channel devices are not commonly used in HEMT technology, bootstrap current sources consisting of n-channel depletion-type HEMTs are used in the Gm-C circuit to obtain high-frequency high-gain operation. By transistor- level simulations, center frequencies of more than 10 GHz are predicted.
Date of Conference: 27-30 Aug. 2007