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2.33- \mu m-Wavelength Distributed Feedback Lasers With InAs–In _{0.53} Ga _{0.47} As Multiple-Quantum Wells on InP Substrates

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7 Author(s)
T. Sato ; NTT Photonics Labs., Nippon Telegraph & Telephone Corp., Atsugi ; M. Mitsuhara ; N. Nunoya ; T. Fujisawa
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We demonstrate 2.33-mum-wavelength InP-based distributed feedback (DFB) lasers with InAs-In0.53Ga0.47 multiple-quantum wells as the active region. The maximum output power is 20 mW at 25degC and the maximum operating temperature is as high as 95degC. Stable single-mode operation with a sidemode suppression ratio of 30 dB is obtained, and the emission wavelength of the laser is finely controlled from 2.335 to 2.348 mum by adjusting the injection current and the operating temperature. The current-tuning and temperature-tuning rates of the DFB wavelength are +0.007 nm/mA and +0.148 nm/K, respectively.

Published in:

IEEE Photonics Technology Letters  (Volume:20 ,  Issue: 12 )