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In this work, the use of silicon rich oxide (SRO) and chemical vapor deposition SiO2 double layers as passivation films of coplanar waveguides (CPW) on high resistivity silicon (HR-Si) with an N+ backside is studied. The microwave performance of the fabricated CPWs is evaluated by computing the attenuation loss of the devices in the 0.045-50 GHz frequency range. Experimental results show that the N+ layer can be used without affecting CPW performance. Also, using a combined dielectric layer (SRO20 /SiO2 ), the attenuation losses are reduced compared to single dielectric layers.