By Topic

Fabrication and Characterization of Coplanar Waveguides on Silicon Using a Combination of SiO _{2} and SRO _{20}

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Leal-Romero, R. ; Centro de Investig. Cienc. y de Educ. Super. de Ensenada, Ensenada ; Zuniga-Juarez, J.E. ; Zaldivar-Huerta, I.E. ; del Carmen Maya-Sanchez, M.
more authors

In this work, the use of silicon rich oxide (SRO) and chemical vapor deposition SiO2 double layers as passivation films of coplanar waveguides (CPW) on high resistivity silicon (HR-Si) with an N+ backside is studied. The microwave performance of the fabricated CPWs is evaluated by computing the attenuation loss of the devices in the 0.045-50 GHz frequency range. Experimental results show that the N+ layer can be used without affecting CPW performance. Also, using a combined dielectric layer (SRO20 /SiO2 ), the attenuation losses are reduced compared to single dielectric layers.

Published in:

Components and Packaging Technologies, IEEE Transactions on  (Volume:31 ,  Issue: 3 )