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In-line methodology for defectivity analysis from dark field wafer inspection to defect root cause analysis using FIB cut

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5 Author(s)

In line defectivity monitoring needs to handle and process a huge amount of data in order to control and analyze the yield impacting defects in an advanced CMOS line (120, 90, 65 and 45 nm design rule). These data need to be processed in order to detect and classify the different defect types, and then analyze the impact on the yield of each defect type. Only a fully integrated and automated methodology can be powerful enough to process the data provided by the wafer inspection tools in order to sample the most critical defects to be finally cross-sectioned using focus ion beam (FIB). The purpose of this paper is to present a methodology, developed at Crolles2 Alliance, compatible with the needs described above in a 300 mm production environment.

Published in:

Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI

Date of Conference:

5-7 May 2008