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SEM-based methodology for root cause analysis of wafer edge and bevel defects

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6 Author(s)
Porat, R. ; Appl. Mater. Rehovot Israel, Rehovot ; Dotan, K. ; Hemar, S. ; Levin, L.
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Monitoring detectivity of the wafer edge, bevel and apex - the areas beyond the pattern - is becoming increasingly important in the yield enhancement efforts of high-end fabs. In this paper we present a methodology for root cause analysis of edge and bevel defects, based on inline SEM review and EDX-based material analysis.

Published in:

Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI

Date of Conference:

5-7 May 2008