Referenced Items are not available for this document.
Monitoring detectivity of the wafer edge, bevel and apex - the areas beyond the pattern - is becoming increasingly important in the yield enhancement efforts of high-end fabs. In this paper we present a methodology for root cause analysis of edge and bevel defects, based on inline SEM review and EDX-based material analysis.
Published in:
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Date of Conference: 5-7 May 2008
- Page(s):
- 11 - 14
- ISSN :
- 1078-8743
- E-ISBN :
- 978-1-4244-1965-4
- Print ISBN:
- 978-1-4244-1964-7
- INSPEC Accession Number:
- 10040093
- Conference Location :
- Cambridge, MA
- Digital Object Identifier :
- 10.1109/ASMC.2008.4528998
- Product Type:
- Conference Publications
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