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Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes

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5 Author(s)
Rajasekharan, B. ; Inst. for Nanotechnol., Univ. of Twente, Enschede ; Salm, C. ; Hueting, R.J.E. ; Hoang, T.
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Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we studied lateral p-i-n structures using thin silicon on insulator (SOI) or poly-Si layers of varying dimension. With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also propose a new device concept called charge plasma diode.

Published in:

Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on

Date of Conference:

12-14 March 2008

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