Referenced Items are not available for this document.
MOS devices go 3D and new field effect devices appear in the research labs. The talk will regard implications of modified device architectures on established circuit design, showing examples of circuits with multi-gate-FETs and tunneling field effect transistors. The potential of more substantial paradigm changes in circuit design for novel devices was also discussed.
Published in:
Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
Date of Conference: 12-14 March 2008
- Page(s):
- 81 - 84
- E-ISBN :
- 978-1-4244-1730-8
- Print ISBN:
- 978-1-4244-1729-2
- INSPEC Accession Number:
- 10043080
- Conference Location :
- Udine
- Digital Object Identifier :
- 10.1109/ULIS.2008.4527145
- Product Type:
- Conference Publications
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