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Characteristic Instabilities in HfAlO Metal–Insulator–Metal Capacitors Under Constant-Voltage Stress

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6 Author(s)
Kenichi Takeda ; Central Res. Lab., Hitachi, Ltd., Tokyo ; Renichi Yamada ; Toshinori Imai ; Tsuyoshi Fujiwara
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Time-dependent characteristic changes of metal-insulator-metal (MIM) capacitors with HfAlO dielectric prepared by atomic-layer deposition under constant-voltage stress (CVS) were studied. It was found that relative dielectric constant , dielectric loss , temperature coefficient of capacitance , and frequency coefficient of capacitance gradually increase during CVS testing, whereas the voltage dependence of capacitance weakens. It was also found that changes in -value, , and during CVS testing linearly depend on changes in . These three linear relationships are basically explained by a dielectric-response model proposed for a ldquoflat-lossrdquo dielectric. That is, the increases in -value, , and are attributed to the dielectric-loss increase caused by voltage stress. Stress-time dependence of the dielectric-loss increase is expressed very well by a power function. That is, the power exponent obtained by a curve fitting linearly increases with stress voltage and decreases with increasing aluminum concentration in the HfAlO dielectric. This result indicates that aluminum addition into the HfAlO dielectric can improve the characteristic stabilities of a MIM capacitor under voltage stress.

Published in:

IEEE Transactions on Electron Devices  (Volume:55 ,  Issue: 6 )