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Shallow-Trench-Isolation (STI)-Induced Mechanical-Stress-Related Kink-Effect Behaviors of 40-nm PD SOI NMOS Device

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8 Author(s)
Su, V.C. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei ; Kuo, J.B. ; Lin, I.S. ; Guan-Shyan Lin
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This brief reports the shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of the 40-nm PD silicon on insulator (SOI) NMOS device. As verified by the experimentally measured data and the 2-D simulation results, the kink-effect behaviors occur at a higher in the saturation region and show a less steep subthreshold slope for the 40-nm PD device with a smaller S/D length of 0.17 due to the weaker function of the parasitic bipolar device as a result of the larger body-source bandgap-narrowing effect coming from the higher STI-induced mechanical stress.

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Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 6 )