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We present a computationally efficient physics-based compact model designed for the conventional CNTFET featuring a MOSFET-like operation. A large part of its novelty lies on the implementation of a new analytical model of the channel charge. In addition, Boltzmann Monte Carlo (MC) simulation is performed with the challenge to cross-link this simulation technique to the compact modeling formulation. The comparison of the electrical characteristics obtained from the MC simulation and from the compact modeling demonstrates the compact model accuracy within its range of validity. Then, from a study of the CNT diameter dispersion for three technological processes, the compact model allows us to determine the CNTFET threshold voltage distribution and to evaluate the resulting dispersion of the propagation delay from the simulation of a ring oscillator.