Cart (Loading....) | Create Account
Close category search window
 

Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Haiou Li ; Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong ; Chak Wah Tang ; Kei May Lau

Metamorphic AlInAs/GaInAs high-electron mobility transistors with very good device performance have been grown by metal-organic chemical vapor deposition (MOCVD), with the introduction of an effective multistage buffering scheme. Measured room-temperature Hall mobilities of the 2-DEG were over 8000 cm2/V ldr s with sheet carrier densities larger than 4 times 1012 cm-2. Transistors with 1-mum gate length exhibited transconductance up to 626 mS/mm. The unity current gain cutoff frequency fT and the maximum oscillation frequency fmax were 39.1 and 71 GHz, respectively. These results are very encouraging toward the manufacturing of metamorphic devices on GaAs substrates by MOCVD.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 6 )

Date of Publication:

June 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.