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A Bulk FinFET Unified-RAM (URAM) Cell for Multifunctioning NVM and Capacitorless 1T-DRAM

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14 Author(s)
Jin-Woo Han ; Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon ; Seong-Wan Ryu ; Sungho Kim ; Chung-Jin Kim
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A bulk FinFET-based unified-RAM (URAM) cell technology is demonstrated for the fusion of a nonvolatile-memory (NVM) and capacitorless 1T-DRAM. An oxide/nitride/oxide layer and a floating-body are combined to perform a URAM operation in a single transistor. A buried n-well technology for NMOS allows hole accumulation for the 1T-DRAM operation in a p-type bulk substrate. The bulk FinFET URAM offers a cost-effective and fully compatible process with a conventional FinFET SONOS, and it also expedites heat dissipation. Highly reliable NVM and high-speed 1T-DRAM operation are confirmed, and it was also verified that there is no disturbance between the two memory functions.

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IEEE Electron Device Letters  (Volume:29 ,  Issue: 6 )