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In Situ Surface Passivation and CMOS-Compatible Palladium–Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs

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5 Author(s)
Hock-Chun Chin, C. ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Ming Zhu ; Chih-Hang Tung ; Samudra, G.S.
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In this letter, we report a novel n-channel GaAs MOSFET featuring TaN/HfAlO/GaAs gate stack with in situ surface passivation (vacuum anneal and silane treatment), alternative gold-free palladium-germanium (PdGe) source and drain (S/D) ohmic contacts, and silicon plus phosphorus coimplanted S/D regions. With the novel in situ surface passivation, excellent capacitance-voltage characteristics with low-frequency dispersion and small stretch-out can be achieved, indicating low interface state density. This surface-channel GaAs device exhibits excellent transistor output characteristics with a high drain current on/off ratio of 105 and a high peak electron mobility of 1230 cm2/V ldr s. In addition, gold contamination concerning CMOS technology can be alleviated with the successful integration of low-resistance PdGe ohmic contacts.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 6 )