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The dielectric properties of Ba0.6Sr0.4CrxTi1-xO3 thin films prepared by pulsed laser deposition

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5 Author(s)
Shengwen Yu ; Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai ; Jinrong Cheng ; Ruxing Li ; Weicheng Zhu
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Ba0.6Sr0.4CrxTi1-xO3 (BSCT) films were prepared by pulsed laser deposition with the value of x varying from 0 mol% to 2.0 mol%. X-ray diffraction analysis detected an increase in the lattice parameters, which could be due to the characteristics of the growth process. Dielectric properties and tunability of the BSCT films were measured. The dissipation factors of the films decreased with increasing Cr-concentration. The highest figure of merit (FOM) value of 33.3 was obtained in 1.0 mol%-doped BSCT film. As a result, the effect of Cr doping is positive.

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Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on  (Volume:55 ,  Issue: 5 )