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Preparation of ferroelectric NaNbO 3/thin films on MgO substrate by pulsed laser deposition

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4 Author(s)
Shinya Oda ; Dept. of Mater. Chem., Ryukoku Univ., Otsu ; Takehisa Saito ; Hideaki Adachi ; Takahiro Wada

We successfully fabricated good quality NaNbO3 (NN) films on MgO substrate by pulsed laser deposition using a K-Ta-O (KTO) buffer layer. An SrRuO3 (SRO) lower electrode layer was deposited on a KTO buffer layer/(100)MgO substrate and then the NN film was deposited on top. X-ray diffraction showed that the SRO and NN films were epitaxially grown on (100)MgO substrate. Transmission electron microscopy showed a crystal- lographic relationship of [001]NN//[001]MgO between NN and MgO. The relative dielectric constant, epsivr, and dielectric loss, tan delta, of the film were 350 and 0.05 at 1 kHz, respectively. The polarization vs. electric field (P-E) hysteresis loop of the NN film was characteristic of ferroelectric behavior.

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IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control  (Volume:55 ,  Issue: 5 )