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A 140dB-Dynamic-Range MOS Image Sensor with In-Pixel Multiple-Exposure Synthesis

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4 Author(s)
Yamada, T. ; Matsushita Electr. Ind., Osaka ; Kasuga, S. ; Murata, T. ; Kato, Y.

In this work, we have developed an image sensor capable of shooting both dark- and bright-objects in one synthesized frame without necessitating any buffer memories. Multiply acquired signals with different exposure periods can be synthesized in each pixel, in which a feedback loop circuit is incorporated. The pixel feedback loop comprises a storage capacitor, a feedback capacitor and pass transistors. This configuration enables repetition of the image acquisition process, i.e. exposure, signal storage during the next exposure and synthesis of the successively exposed signals, as many times as needed.

Published in:

Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International

Date of Conference:

3-7 Feb. 2008

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