Cart (Loading....) | Create Account
Close category search window
 

A 140dB-Dynamic-Range MOS Image Sensor with In-Pixel Multiple-Exposure Synthesis

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yamada, T. ; Matsushita Electr. Ind., Osaka ; Kasuga, S. ; Murata, T. ; Kato, Y.

In this work, we have developed an image sensor capable of shooting both dark- and bright-objects in one synthesized frame without necessitating any buffer memories. Multiply acquired signals with different exposure periods can be synthesized in each pixel, in which a feedback loop circuit is incorporated. The pixel feedback loop comprises a storage capacitor, a feedback capacitor and pass transistors. This configuration enables repetition of the image acquisition process, i.e. exposure, signal storage during the next exposure and synthesis of the successively exposed signals, as many times as needed.

Published in:

Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International

Date of Conference:

3-7 Feb. 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.