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The Influence of the Wetting Layer Morphology on the Nucleation and the Evolution of InAs/GaAs (001) Quantum Dots

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7 Author(s)
Bute, O. ; Dept. of Phys., Valahia Univ. of Targoviste, Targoviste ; Cimpoca, G.V. ; Placidi, E. ; Arciprete, F.
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We present an impression of the present state of knowledge on the formation, via a modified Stransky-Krastanov growth mode, of InAs quantum dots (QD) on GaAs substrates. In order to fulfil this requirement, we have grown by MBE a single sample with gradient coverage and its analyses being performed by means of atomic force microscopy.

Published in:

Semiconductor Conference, 2007. CAS 2007. International  (Volume:2 )

Date of Conference:

Oct. 15 2007-Sept. 17 2007

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