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Low-Threshold 1.3- \mu m GaInNAs Quantum-Well Lasers Using Quaternary-Barrier Structures

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4 Author(s)
Jin, C.Y. ; Dept. of Frontier Res. & Technol., Kobe Univ., Kobe ; Liu, H.Y. ; Zhang, S.Y. ; Hopkinson, M.

GaInNAs quaternary-barrier structures, where indium is incorporated to achieve the lattice-matched condition, have been employed for 1.3-m GaInNAs-GaAs single- (SQW) and triple-quantum-well (TQW) lasers. Compared to a GaNAs ternary-barrier structure, photoluminescence results from the quaternary-barrier sample show improved optical properties. Threshold current densities have been achieved with the lowest values of 150 and 529 A/cm2 for GaInNAs SQW and TQW lasers at room temperature, respectively.

Published in:

Photonics Technology Letters, IEEE  (Volume:20 ,  Issue: 11 )