Low-Threshold 1.3-$\mu$m GaInNAs Quantum-Well Lasers Using Quaternary-Barrier Structures

GaInNAs quaternary-barrier structures, where indium is incorporated to achieve the lattice-matched condition, have been employed for 1.3-m GaInNAs-GaAs single- (SQW) and triple-quantum-well (TQW) lasers. Compared to a GaNAs ternary-barrier structure, photoluminescence results from the quaternary-barrier sample show improved optical properties. Threshold current densities have been achieved with the lowest values of 150 and 529 A/cm
²
for GaInNAs SQW and TQW lasers at room temperature, respectively.