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High-Performance Metal-Induced Laterally Crystallized Polycrystalline Silicon P-Channel Thin-Film Transistor With \hbox {TaN/HfO}_{2} Gate Stack Structure

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6 Author(s)
Ming-Wen Ma ; Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu ; Tien-Sheng Chao ; Chun-Jung Su ; Woei-Cherng Wu
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In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral- crystallization (MILC) channel layer and TaN/HfO2 gate stack is demonstrated for the first time. The devices of low threshold voltage VTH ~ 0.095 V, excellent subthreshold swing S.S. ~83 mV/dec, and high field-effect mobility muFE ~ 240 cm2/V ldr s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO2 gate dielectric with the effective oxide thickness of 5.12 nm.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 6 )