By Topic

A Low-Supply-Voltage CMOS Sub-Bandgap Reference

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Becker-Gomez, A. ; Dept. of Electr. Eng., Univ. of Texas-Dallas, Richardson, TX ; Lakshmi Viswanathan, T. ; Viswanathan, T.R.

A low-power (21 muW ) bandgap reference source that is operable from a nominal supply voltage of 1.4 V is described. The circuit provides an output voltage equal to the bandgap voltage having a low output resistance and allows resistive loading. It does not use resistors or operational amplifiers. Thus, the design is suitable for fabrication in any digital CMOS technology. The circuit uses a current conveyor and current mirrors to convert the proportional to absolute temperature voltage into a current using a MOSFET. The current is converted back to a voltage by using the functional inverse of the FET v-i characteristics. This makes the voltage gain linear and temperature independent. The absence of back-gate bias is the reason for achieving the low supply voltage of operation. Simulation results using the transistor models for the 0.18-mum TSMC process show that the voltage-variation over the temperature range 0 to 100degC is <1 mV.

Published in:

Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:55 ,  Issue: 7 )