By Topic

Measurement of interconnect loss due to dummy fills

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Tsuchiya, A. ; Dept. of Commun. & Comput. Eng., Kyoto Univ., Kyoto ; Onodera, Hidetoshi

This paper reports measurement results of on-chip interconnects with CMP dummy fill. CMP dummy fill is a floating metal for metal density adjustment. In high frequency above 10 GHz, the eddy current induced in dummy fills affects the interconnect loss. We fabricated test structures of on-chip interconnect with dummy fills. From the measurement results, the effect of the dummy fills on the wire resistance is not negligible even if the ground wires are adjacent to the signal wire. The dummy fills in the upper/lower metal layer affect the wire resistance and the resistance increases by 20% at 50 GHz.

Published in:

Signal Propagation on Interconnects, 2007. SPI 2007. IEEE Workshop on

Date of Conference:

13-16 May 2007