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Circular geometry mos transistor analysis of SOI substrates for high energy physics particle detectors

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8 Author(s)
Suder, S.L. ; Northern Ireland Semicond. Res. Centre, Queen''s Univ. Belfast, Belfast ; Ruddell, F.H. ; Montgomery, J.H. ; Armstrong, B.M.
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SOI substrates are important for the fabrication of monolithic active pixel high energy physics particle detectors. In this work, self-aligned circular geometry MOS transistor test structures were fabricated on ion split, bonded SOI substrates to evaluate the interface between the high resistivity handle silicon and the SOI buried oxide. Pre- and post- proton irradiation transistor measurements are presented, showing an increased SOI buried oxide trapped charge of only 3.45times1011 cm-2 for a dose of 2.7 Mrad.

Published in:

Microelectronic Test Structures, 2008. ICMTS 2008. IEEE International Conference on

Date of Conference:

24-27 March 2008