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Fabrication of Self-Aligned Enhancement-Mode  \hbox {In}_{0.53}\hbox {Ga}_{0.47}\hbox {As} MOSFETs With  \hbox {TaN/HfO}_{2}\hbox {/AlN} Gate Stack

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6 Author(s)
Davood Shahrjerdi ; Microelectron. Res. Center, Texas Univ., Austin, TX ; Thomas Rotter ; Ganish Balakrishnan ; Diana Huffaker
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In this letter, we report the fabrication and characterization of self-aligned inversion-type enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs). The In0.53Ga0.47As surface was passivated by atomic layer deposition of a 2.5-nm-thick AIN interfacial layer. In0.53Ga0.47As MOS capacitors showed an excellent frequency dispersion behavior. A maximum drive current of 18.5 muA/mum was obtained at a gate overdrive of 2 V for a MOSFET device with a gate length of 20 mum. An Ion/off ratio of 104, a positive threshold voltage of 0.15 V, and a subthreshold slope of ~165 mV/dec were extracted from the transfer characteristics. The interface-trap density is estimated to be ~7-8 times 1012 cm-2 ldr eV-1 from the subthreshold characteristics of the MOSFET.

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IEEE Electron Device Letters  (Volume:29 ,  Issue: 6 )