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In this paper, electron-energy- and lattice- temperature-dependent hot-electron-capture properties have been investigated for polysilicon-oxide-nitride-oxide-silicon-type Flash memories using a Si3N4 and high-dielectric-constant (k) ZrO2/HfO2 charge trapping layer when channel hot-electron injection is applied for programming. Hot-electron-capture rate is extracted by using an electrical method for various devices, and its lattice-temperature dependence indicates that inelastic phonon scattering may be the dominant mechanism of hot-electron relaxation. Memory device using a ZrO2 charge trapping layer shows enhanced electron capture from extended SixZr1-xO2 interface of ~2 nm due to more sufficient scattering, and the programming speed of ZrO2 device is enhanced as compared to HfO2 by ~2.2 times and Si3N4 by ~3.2 times. Capabilities of low-voltage operation and improved endurance property are also demonstrated for ZrO2 device as compared to the other contending NOR-type devices.