By Topic

A MOS Gated Power Semiconductor Switch Using Band-to-Band Tunneling and Avalanche Injection Mechanism

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hua Ye ; Microsoft Corp., Redmond, WA ; Haldar, P.

This paper proposes a novel concept for a mid- to high-voltage-power semiconductor switch that utilizes reverse band-to-band tunneling and an avalanche injection mechanism. The proposed tunneling-junction-enhanced metal-oxide-semiconductor field-effect transistor (TJE-MOSFET) is predicted to have the best properties of both power MOSFETs and insulated gate bipolar transistors (IGBTs)-the two main competing power semiconductor technologies at mid-voltage (i.e., 500-1000 V) ratings. The structure and the operating mechanism of the TJE-MOSFET are described. The proposed novel device operates in a way that is similar to an IGBT; however, due to the inclusion of a nanostructured band-to-band tunneling junction, the internal barrier voltage for forward conduction is much smaller than that in an IGBT. Numerical simulation suggests that, at the same current level, the forward voltage drop of the TJE-MOSFET is much smaller than that of an IGBT. Compared to power MOSFETs, the new device has a lower forward voltage drop, even at very low current levels.

Published in:

Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 6 )