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The lateral nonuniformity (LNU) effects of border traps are studied by exploring both the high- and low-frequency characteristics in N-type channel metal-oxide-semiconductor field-effect transistors. According to experimental data, the deterioration of nonuniformity is significantly enhanced at low frequencies. The cause may be due to the additional trapped charges of border traps (near-interface oxide traps) under the low-frequency measurement. This model is successfully simulated by the combination of low-frequency C-V curves with the heavily and lightly damaged regions. Additionally, the double-peak charge-pumping current is observed in low-frequency measurements, which can further support our hypothesis that border-trap-enhanced LNU exists. Finally, the geometric effect of the polygate and the thickness effect of the gate oxide are also investigated for the nonuniformity issue.