By Topic

A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Lengyel, G. ; Siemens AG Munich, West Germany ; Jelley, K.W. ; Engelmann, R.W.H.

A semiempirical model for electroabsorption in GaAs/AlGaAs quantum wells that is simple and has sufficient accuracy to make it suitable as a fast design tool for multiple quantum well (MQW) optical modulators is proposed. The model is based on a higher-order perturbation approach which includes all bound solutions of the unperturbed Hamiltonian. To complete the model, semiempirical relationships are set up for both the zero-field absorption peak and the half-width at half-maximum (HWHM) values of the heavy-hole exciton. Comparison with extensive experimental data shows a remarkable agreement for a range of wells between 5 and 20 nm and for photon energies on the long wavelength side of the absorption peak. These wavelength and well-size ranges coincide with those needed for practical design

Published in:

Quantum Electronics, IEEE Journal of  (Volume:26 ,  Issue: 2 )