By Topic

The hydrogenated amorphous silicon reach-through avalanche photodiodes (a-Si:H RAPDs)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Jyh-Wong Hong ; Semicond. & Syst. Lab., Nat. Chen Kung Univ., Taiwan ; Chen, Y.-W. ; Laih, W.-L. ; Yean-Kuen Fang
more authors

The RAPD (reach-through avalanche photodiode) structure is adopted to improve the electrical and optical performance of photosensing devices made of a-Si:H. Both the electron-injection n+ -i-δp-i-p+ and hole-injection p+-i-δn-i-n+ a-Si:H RAPDs are fabricated on the indium-tin-oxide-coated glass substrates by plasma-enhanced chemical vapor deposition (PECVD). The photocurrent multiplication method is employed to study the multiplication factors and the impact ionization coefficients of the RAPDs. Since the electron-injection models have better performance, the relationships between the device dimensions and characteristics, such as I-V curves, optical gains, impact ionization rates, and excess noise factors, are further studied. The results indicate that the a-Si:H RAPD is a promising device for photosensing applications

Published in:

Quantum Electronics, IEEE Journal of  (Volume:26 ,  Issue: 2 )