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We have proposed a (111)-faceted metal source and drain (S/D) with a metal gate and a high-k gate dielectric for aggressively scaled complementary metal-insulator-semiconductor field-effect transistors (MISFETs). The metal S/D is formed by epitaxially grown nickel disilicide. N-type or p-type dopants are segregated in the atomically flat metal/Si interfaces that help to reduce the effective Schottky barrier height between the epitaxial metal and silicon. Therefore, a single type of metal S/D can work for both n-type and p-type MISFETs. The dopant segregation is realized by an ion implantation into the epitaxial silicides and a subsequent low-temperature annealing. Operations of 6-nm-long n-type and p-type silicon-on-insulator MISFETs that came with a fully silicided gate electrode and a high-k gate dielectric were experimentally demonstrated. The excellent short-channel effect immunity due to the trapezoidal channel was also verified by numerical simulation.