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Stable Electrical Operation of 6H–SiC JFETs and ICs for Thousands of Hours at 500 ^{\circ}\hbox {C}

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11 Author(s)

The fabrication and testing of the first semiconductor transistors and small-scale integrated circuits (ICs) to achieve up to 3000 h of stable electrical operation at 500degC in air ambient is reported. These devices are based on an epitaxial 6H-SiC junction field-effect transistor process that successfully integrated high-temperature ohmic contacts, dielectric passivation, and ceramic packaging. Important device and circuit parameters exhibited less than 10% of change over the course of the 500degC operational testing. These results establish a new technology foundation for realizing durable 500degC ICs for combustion-engine sensing and control, deep-well drilling, and other harsh-environment applications.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 5 )

Date of Publication:

May 2008

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