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Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes

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4 Author(s)
Nayfeh, O.M. ; Massachusetts Inst. of Technol., Cambridge ; Ni Chleirigh, Cait ; Hoyt, J.L. ; Antoniadis, D.A.

Strained silicon-germanium (Si0.6Ge0.4) gated diodes have been fabricated and analyzed. The devices exhibit significantly enhanced gate-controlled tunneling current over that of coprocessed silicon control devices. The current characteristics are insensitive to measurement temperature in the 80 K to 300 K range. Independently extracted valence band offset at the strained Si0.6Ge0.4/Si interface is 0.4 eV, yielding a Si0.6Ge0.4 bandgap of 0.7 eV, which is much reduced compared to that of Si. The results are consistent with device operation based on quantum-mechanical band-to-band (BTB) tunneling rather than on thermal generation. Moreover, simulation of the strained Si0.6Ge0.4 device using a quantum-mechanical BTB tunneling model is in good agreement with the measurements.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 5 )

Date of Publication:

May 2008

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