We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Nayfeh, O.M. ; Massachusetts Inst. of Technol., Cambridge ; Ni Chleirigh, Cait ; Hoyt, J.L. ; Antoniadis, D.A.

Strained silicon-germanium (Si0.6Ge0.4) gated diodes have been fabricated and analyzed. The devices exhibit significantly enhanced gate-controlled tunneling current over that of coprocessed silicon control devices. The current characteristics are insensitive to measurement temperature in the 80 K to 300 K range. Independently extracted valence band offset at the strained Si0.6Ge0.4/Si interface is 0.4 eV, yielding a Si0.6Ge0.4 bandgap of 0.7 eV, which is much reduced compared to that of Si. The results are consistent with device operation based on quantum-mechanical band-to-band (BTB) tunneling rather than on thermal generation. Moreover, simulation of the strained Si0.6Ge0.4 device using a quantum-mechanical BTB tunneling model is in good agreement with the measurements.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 5 )