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An InGaN-GaN thin-film vertical-type light-emitting diode with a two-dimensional photonic crystal (PC) on the emitting surface and a TiO-SiO omnidirectional reflector on the bottom was fabricated. The device was investigated by performing a series of experiments and numerical computations. Electroluminescence measurement revealed a strong extraction enhancement in the vertical direction at 433-nm wavelength. The emission spectrum of the light was found to be strongly modified by the PC to have a significantly narrow linewidth of 5 nm. Our experimental results were in accord with those obtained from our numerical findings.