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Dynamics of the Profile Charging During \hbox {SiO}_{2} Etching in Plasma for High Aspect Ratio Trenches

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3 Author(s)

We model charging of the high aspect ratio 3-D trenches during plasma etching of dielectrics. The ion and electron fluxes were computed along the feature using Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving Poisson equation using finite-element method.

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Plasma Science, IEEE Transactions on  (Volume:36 ,  Issue: 4 )