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Laser scattering surface maps of polysilicon films are studied under a range of process conditions. The surface maps are shown to contain information that correlates with polysilicon film morphology which impacts device performance within a CMOS process for the 45 nm node. These surface maps provide whole wafer surface information at a data collection throughput of 1 minute per wafer. They provide a novel and rapid methodology for process tool monitoring that can enhance the line stability.