By Topic

Carrier-induced change in refractive index of InP, GaAs and InGaAsP

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
B. R. Bennett ; Rome Air Dev. Center, Hanscom AFB, Bedford, MA, USA ; R. A. Soref ; J. A. Del Alamo

The change in refractive index Δn produced by injection of free carriers in InP, GaAs, and InGaAsP is theoretically estimated. Bandfilling (Burstein-Moss effect), bandgap shrinkage, and free-carrier absorption (plasma effect) are included. Carrier concentrations of 1016/cm3 to 1019/cm 3 and photon energies of 0.8 to 2.0 eV are considered. Predictions for Δn are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10-2 are predicted for carrier concentrations of 10 8/cm3 suggested that low-loss optical phase modulators and switches using carrier injection are feasible in these materials

Published in:

IEEE Journal of Quantum Electronics  (Volume:26 ,  Issue: 1 )