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Impact of MOSFET Gate-Oxide Reliability on CMOS Operational Amplifier in a 130-nm Low-Voltage Process

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2 Author(s)
Ming-Dou Ker ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu ; Jung-Sheng Chen

The effect of the MOSFET gate-oxide reliability on operational amplifier is investigated with the two-stage and folded-cascode structures in a 130-nm low-voltage CMOS process. The test operation conditions include unity-gain buffer (close-loop) and comparator (open-loop) configurations under the dc stress, ac stress with dc offset, and large-signal transition stress. After overstress, the small-signal parameters, such as small-signal gain, unity-gain frequency, and phase margin, are measured to verify the impact of gate-oxide reliability on circuit performances of the operational amplifier. The gate-oxide reliability in the operational amplifier can be improved by the stacked configuration under small-signal input and output application. The impact of soft and hard gate-oxide breakdowns on operational amplifiers with two-stage and folded-cascode structures has been analyzed and discussed. The hard breakdown has more serious impact on the operational amplifier.

Published in:

IEEE Transactions on Device and Materials Reliability  (Volume:8 ,  Issue: 2 )